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High performance and reliable TO package

机译:高性能和可靠的TO封装

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摘要

The development of new TO package towards package miniaturization trend for improving cost performance while enhancing product performance to low ohmic resistance and high current capability had brought challenges into the design for manufacturability and reliability. An innovation of TO package, TO Leadless (TOLL), enables Infineon to maintain technology leadership in Power Semiconductors and competitiveness of business in offering latest product technologies and solutions for Automotive application. The design of TOLL increased the power density and it has large die pad area for power chip size maximization and low profile lead structure for short wire bond looping are greatly contributing to low ohmic resistance and high current capability. The Automotive MOSFET product characterization showed TOLL performed ohmic resistance (Ron) lower and current rating higher than D2PAK. The lead post design of TOLL for power and logic interconnects provides compatibility for broad range of power semiconductors family such as MOSFET, high current PROFET, Power PROFET, Connect FET, NovalithIC, Complimentary MOS, SiC JFET and others. The unique design of TOLL also enables economies of scale in manufacturing and avoids additional cost for conversion at mold tool and test contactor in handling difference products. Throughout development of TOLL, an invention “intrusion mold edge” design was patented and implemented in TOLL for production handling enhancement. As TOLL design is optimized to a low profile leadframe and molded body package for power enhancement, die attach interconnects reliability performance had become a great challenge. The optimization of die attach process did not demonstrate improvement of solder fatigue stress after temperature cycling of reliability test. The die attach solder fatigue due to thermal-mechanical stress, package and chip mechanical designs were characterized to determine the most effective approach to enhance the reliability per- ormance. The innovation is to introduce appropriate chip thickness to minimize the thermal-mechanical stress. As a result, TOLL achieved a high performance and reliable package while maintaining the cost effectiveness.
机译:面向封装小型化趋势的新型TO封装的发展,旨在提高成本性能,同时将产品性能提高到低欧姆电阻和大电流能力,这给可制造性和可靠性设计带来了挑战。 TO封装的创新TO Leadless(TOLL)使英飞凌能够在功率半导体领域保持技术领先地位,并在为汽车应用提供最新的产品技术和解决方案方面保持业务竞争力。 TOLL的设计提高了功率密度,并且具有大的芯片焊盘面积以最大程度地提高功率芯片的尺寸,而短剖面引线结构(用于短引线键合环路)则极大地有助于降低欧姆电阻和大电流能力。汽车MOSFET产品的特性表明,TOLL的欧姆电阻(Ron)较低,而额定电流高于D2PAK。用于电源和逻辑互连的TOLL的引线柱设计为广泛的功率半导体系列(例如MOSFET,高电流PROFET,功率PROFET,Connect FET,NovalithIC,免费MOS,SiC JFET等)提供了兼容性。 TOLL的独特设计还实现了制造的规模经济,并避免了在处理差异产品时在模具和测试接触器上进行转换所产生的额外成本。在TOLL的整个开发过程中,发明了“侵入模具边缘”设计,并已在TOLL中获得专利,以增强生产处理能力。由于TOLL设计针对薄型引线框和模制主体封装进行了优化,以提高功率,因此,芯片连接互连的可靠性性能已成为一个巨大的挑战。可靠性测试的温度循环后,芯片贴装工艺的优化并未显示出焊料疲劳应力的改善。对由于热机械应力,封装和芯片机械设计而导致的芯片贴装焊料疲劳进行了表征,从而确定了提高可靠性的最有效方法。创新之处在于引入适当的切屑厚度以最小化热机械应力。结果,TOLL在保持成本效益的同时获得了高性能和可靠的封装。

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