In this paper, we will review the electrowetting on dielectric (EWOD) principles applied to microfluidic devices. We replaced the usually used teflon surface by ZnO transparent film in order to obtain a device with an optical weak absorption in the diapason ranged from VIS to far-MIR and THz waves. We studied the piezoelectric characteristics of ZnO films obtained by RF magnetron sputtering in Ar+O2 plasma. ZnO films have been grown on SiO2/Si(100) substrate using a zinc oxide target. The morphological characteristics of the films were investigated by atomic force microscopy (AFM). We present the THz spectra from ZnO films.
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