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CdS thin film prepared by shallow chemical bath deposition for low cost CIGS thin film solar cell

机译:CDS薄膜通过浅化学浴沉积制备,用于低成本CIGS薄膜太阳能电池

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It was well-known that the n-type buffer layer grown by the chemical bath deposition (CBD) technique showed the highest efficiency for CIGS thin film solar cell. However, CBD process showed a serious drawback of producing considerable of waste solution and low yield. In this study, a novel technique called shallow chemical bath deposition (SCBD) was employed to grown Cadmium sulfide (CdS) thin film. UV-visible-NIR spectrophotometer and scanning electronic microscopy were employed to characterized the thin film quality. The results hinted that the SCBD technique showed excellent potential to get high quality thin film, which could be suitable to mass production of buffer layer for CIGS thin film solar cells.
机译:众所周知,由化学浴沉积(CBD)技术生长的N型缓冲层显示了CIGS薄膜太阳能电池的最高效率。 然而,CBD过程显示出产生相当的废物溶液和低产量的严重缺点。 在该研究中,使用一种新的技术,称为浅化学浴沉积(SCBD)将硫化镉(Cds)薄膜生长。 使用UV可见光液分光光度计和扫描电子显微镜,以表征薄膜质量。 结果暗示SCBD技术显示出高质量薄膜的优异潜力,这适于批量生产CIGS薄膜太阳能电池的缓冲层。

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