Surface Photovoltage Measurement of Perovskite Solar Cells to Screen Carrier Selective Contacts

摘要

SPV measurement through the Kelvin probe method is described. Silicon heterojunction structures show the maximum SPV of 700 V. Measurement on perovskite structures, and the results suggest adding BCP with C60 enhances the selectivity of C60 electron contact. Furthermore, PTAA and PTAA/PFN have similar selectivity but NiOx is poorly selective. SPV is an easy way to provide a relative comparison between various cell structures and contact layers to determine the relative extractable $V_{oc}$ and properties of the contact layer (selectivity, passivation) limiting the efficiency.