Method For Manufcturing Back Electrode Of Carrier Selective Contact Solar Cell And Carrier Selective Contact Solar Cell Using The Same

摘要

A charge selective contact solar cell according to the present invention comprises: a conductive silicon substrate; first and second passivation layers respectively positioned on the upper and lower surfaces of the conductive silicon substrate; a hole selective contact layer for forming a copper iodide thin film having a p-type semiconductor layer characteristic on an upper surface of the first passivation layer; an upper transparent electrode formed on an upper surface of the hole selection contact layer; an upper metal electrode formed on the upper transparent electrode; an electron selective contact layer forming an electron transport layer having an n-type semiconductor layer characteristic on a lower surface of the second passivation layer; a lower metal electrode formed on a lower surface of the electron selective contact layer; A capping layer formed on the lower surface of the lower metal electrode; including, wherein the capping layer blocks the reaction between the iodine source for injection into the copper iodide thin film adopted as the hole selective contact layer and the lower metal electrode It is characterized in that it is coated on the surface of the metal electrode.