Silicon nanocrystals for downshifting applications: a preliminary study

摘要

Simulation and experimental studies on luminescent down-shifting (LDS) effect based on Si-quantum dotsdispersed in a silicon dioxide matrix are performed. We used a transfer matrix approach to simulate the optical propertiesof our structure. In order to take into account the presence of the LDS-layer, we modify the incoming photon flux seen bythe cell, considering the Si-quantum dots absorption and emission with a fixed quantum yield (QY). The estimation of theSi-quantum dots QY has been performed by photoluminescence decay time measurements. Using the method describedin [4], we find a QY between 25% and 35%.