SURFACE TEXTURING AND NANO STRUCTURE FORMATION ON SILICON USING PURE HYDROGEN RADICAL ETCHING REACTION

摘要

We propose a simple method of silicon surface texturingano-structure growth using pure hydrogenwith metal catalyst. This method, which does not need a filament current to generate hydrogen radicals likeconventional hot filament methods, is quite simple and suitable for large area processing. A refractory metal was usedas a catalyst for the hydrogen molecular cracking. Surface morphology of resultant samples were strongly dependedon the reaction pressure and temperature. Texture structures and very fine silicon nanostructures can be obtained bycontrolling the process conditions. TEM results suggested that no dislocation or defects were created on the siliconsurface by this process. A growth model of silicon whiskers and texturing mechanism are discussed based on theSEM results. It is concluded that the proposed method based on a modification of Si surfaces only by hydrogenradicals can be considered as a “green” technology, which can be used for the cost effective fabrication of Si basedsolar cells.