Investigation of post annealing temperature effects on solution-processed In-Ga-O Thin Film Transistors

摘要

As the annealing temperature increased from 200 to 300 °C, the In-Ga-O (IGO) thin-film transistors (TFTs) showed enhanced performances for switching devices. The annealing temperature above 350 °C caused the IGO TFT excessively conductive, and it was attributed to the crystallization of IGO thin-film.