Highly Reliable Gate Driver Circuit with Modulated Gate Bias for Threshold Voltage Amelioration

摘要

This work introduces an a-Si:H gate driver combining an AC-driving method with modulated V_(GS) of pull-down TFTs to further improve the V_(TH) shift for long-term operation. The experimental results indicate the V_(TH) shift of a TFT with the proposed scheme is reduced by 58.33% compared to that of DC-bias stress.