Solution Processed Amorphous In_2O_3-Based TFT Performance Depending on the Semiconductor Film Morphology

摘要

The morphology of solution-processed amorphous In_2O_3-based thin films annealed at 350°C was investigated. The semiconductor solutions were out of the iXsenic S series, a product of Evonik Industries AG. By increasing the smoothness of the semiconductor thin film it is possible to improve the performance of the TFTs. Smooth spin coated films exhibit an increase in mobility above 15 cm~2/Vs and higher gate bias stress stability.