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Effects of Multi-Gates on Performance and Stability of Self-Aligned Coplanar a-IGZO TFTs

机译：多栅极对自对准共面a-IGZO TFT性能和稳定性的影响

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摘要

We studied the effects of multiple gates on the performance and stability of a-IGZO TFTs. The subthreshold region of transfer characteristics shift to negative gate voltage direction with increasing gate number, and the threshold voltage shift induced by positive gate bias stress decreases with increasing gate number.

机译：我们研究了多个栅极对a-IGZO TFT的性能和稳定性的影响。传输特性的亚阈值区域随着栅极数量的增加而向负栅极电压方向偏移，并且由正栅极偏置应力引起的阈值电压偏移随着栅极数量的增加而减小。

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来源
《International display workshops》|2012年|265-268|共4页
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作者
Jiung Han; Donghan Kang; Jin Jang;
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关键词
Amorphous indium-gallium-zinc-oxide (a-IGZO); Thin-film transistor (TFT); Self-aligned coplanar; Multi-gates;

机译：非晶铟镓锌氧化物（a-IGZO）;薄膜晶体管（TFT）;自对准共面;多门;

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专利

1. Improvement of PBTS Stability in Self-Aligned Coplanar a-IGZO TFTs [J] . Saeroonter Oh, Ju-Heyuck Baeck, Dohyung Lee, SID International Symposium: Digest of Technology Papers . 2015,第3期

机译：自对准共面a-IGZO TFT中PBTS稳定性的提高
2. Reliability Analysis and Improvement of Self-aligned Coplanar a-IGZO TFTs for OLED Display [J] . Zhen Song, Guoying Wang, Dini Xie, SID International Symposium: Digest of Technology Papers . 2018,第3期

机译：用于OLED显示器的自对准Coplanar A-IGZO TFT的可靠性分析和改进
3. High Reliable a-IGZO TFTs with Self-Aligned Coplanar Structure for Large-Sized Ultrahigh-Definition OLED TV [J] . Chanki Ha, Heung-Jo Lee, Jin-Woo Kwon, SID International Symposium: Digest of Technology Papers . 2015,第2期

机译：具有自对准共面结构的高可靠性a-IGZO TFT，适用于大型超高清OLED电视
4. Effects of Multi-Gates on Performance and Stability of Self-Aligned Coplanar a-IGZO TFTs [C] . Jiung Han, Donghan Kang, Jin Jang International display workshops . 2012

机译：多栅对自对准共道型A-IGZO TFT性能和稳定性的影响
5. Implant Activated Source/Drain Regions for Self-Aligned IGZO TFT [D] . Chowdhury, Rahnuma Rifat . 2019

机译：用于自对准IGZO TFT的植入活性源/漏区
6. Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers [O] . Jae-Moon Chung, Xiaokun Zhang, Fei Shang, 2018

机译：通过刻蚀停止层纳米层的清洁界面工艺增强a-IGZO TFT器件的性能
7. A Light-induced Threshold Voltage Instability Based on a Negative-U Center in a-IGZO TFTs with Different Oxygen Flow Rates [O] . Jin-Seob Kim, Yu-Mi Kim, Kwang-Seok Jeong, 2014

机译：基于具有不同氧气流量的A-IGZO TFT中的负U中心的光引感阈值不稳定性

Effects of Multi-Gates on Performance and Stability of Self-Aligned Coplanar a-IGZO TFTs

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