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Implementation of a New Offset Generator Block for the Low-Voltage, Low-Power Self Biased Threshold Voltage Extractor Circuit

机译:用于低压,低功率自偏置阈值电压提取器电路的新型偏置发生器模块的实现

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In this paper, we have modified a low-voltage, low- power V_T (Threshold Voltage) extractor circuit, and by doing this we have obtained results with greater accuracy. At the same time, the output generated from this circuit is found to be robust enough against supply voltage variations. This scheme is based on the most popular extraction algorithm which essentially starts with I_d versus V_(GS) characteristics of any MOS transistor operating in saturation. Here the V_T extractor block is followed by an offset generator and a feedback block. Now, for the purpose of modification, we have mainly changed the architecture of the offset generator block, keeping rest of the basic blocks unaltered. While doing this we have achieved more accurate results at low supply voltage ranging from 1.2 to 1.8V. In this range, for almost all the cases we found results with excellent accuracy. Whereas, considering the worst case scenario, the maximum deviation from the SPICE-V_T value is found to be only 2.9%. Low power consumption, self-compensation for any second-order effect etc. are the key features for this modified architecture. The paper describes the V_T extraction scheme, as well as, illustrates the techniques and circuit architecture required for the purpose. The results are supported by SPICE simulations.
机译:在本文中,我们修改了一个低电压,低功耗的V_T(阈值电压)提取器电路,并通过此方法获得了更高精度的结果。同时,发现该电路产生的输出具有足够的抵抗电源电压变化的鲁棒性。该方案基于最流行的提取算法,该算法主要从饱和状态下工作的任何MOS晶体管的I_d对V_(GS)特性开始。在此,V_T提取器块后面是偏移量生成器和反馈块。现在,出于修改的目的,我们主要更改了偏移量生成器块的体系结构,而其余基本块保持不变。这样做时,我们在1.2至1.8V的低电源电压下获得了更准确的结果。在此范围内,几乎在所有情况下,我们都发现了具有极高准确性的结果。而考虑到最坏的情况,发现与SPICE-V_T值的最大偏差仅为2.9%。低功耗,针对任何二阶效应的自补偿等是此修改架构的关键功能。本文介绍了V_T提取方案,并说明了为此目的所需的技术和电路架构。结果得到SPICE仿真的支持。

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