High-Efficiency AlGaN-based Deep-UV LEDs Realized by Improving Injection and Light-Extraction Efficiency

摘要

Deep-ultraviolet (DUV) light-emitting diodes (LEDs) have a wide range of potential applications such as sterilization, water purification, medicine and biochemistry, and so on. We have recently developed 220-350 nm AlGaN and InAlGaN DUV-LEDs. However, the efficiency of the AlGaN DUV-LED is not yet so high, due to low electron injection efficiency (EIE) caused by quite low hole concentrations of p-type AlGaN, as well as, inferior light extraction efficiency (LEE). In this report, we demonstrated significant increase of EIE by using multi-quantum barrier (MQB) electron blocking layer (EBL) and increase of LEE by using highly-reflective p-type electrode in AlGaN DUV LEDs.