Comparison of low-frequency and microwave frequency capacitance determination techniques for mm-wave Schottky diodes

摘要

The differences of low-frequency (1.0 MHz) and high frequency (3–10 GHz) capacitance determination techniques are compared in this work. The low-frequency measurements are direct capacitance measurements performed with an LCR meter and the capacitance determination at microwave frequencies is done by extracting the capacitance from S-parameter measurement results. Several discrete and monolithically integrated Schottky diodes are measured with both techniques and the differences of the techniques are discussed in the view of the obtained results. An evaluation is made on which technique is better suited for building a valid capacitance model for a Schottky diode operating at millimeter wave frequencies.