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Sn-modified Ni-nanowire array films prepared by electrodeposition and their electrochemical properties as an anode material of lithium-ion batteries

机译:电沉积制备的Sn修饰的Ni-纳米线阵列膜及其电化学性质作为锂离子电池的负极材料

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Ni-nanowire array films were prepared by general galvanostatic electrodeposition employing a polycarbonate membrane filter (pore diameter: 0.1 µm or 0.8 µm) as a template and subsequent dissolution of the membrane filter in chloroform. Thereafter the Ni-nanowire array films were modified with Sn by pulsed electrodeposition. Morphology of Sn-modified Ni-nanowire array films obtained was largely dependent on the microstructure of the membrane filter and the conditions of pulsed electrodeposition of Sn. It was confirmed that uniform deposition of Sn right into the Ni-nanowire array structure improved charge-discharge characteristics of the Sn-modified Ni-nanowire array films as an anode of lithium-ion batteries.
机译:通过使用聚碳酸酯膜滤器(孔径:0.1 µm或0.8 µm)作为模板,通过常规恒流电沉积法制备Ni-纳米线阵列膜,然后将膜滤器溶解在氯仿中。之后,通过脉冲电沉积用Sn修饰Ni-纳米线阵列膜。获得的Sn修饰的Ni-纳米线阵列膜的形貌在很大程度上取决于膜滤器的微观结构和Sn的脉冲电沉积条件。证实了将Sn正好均匀地沉积在Ni-纳米线阵列结构中改善了作为锂离子电池阳极的Sn-修饰的Ni-纳米线阵列膜的充放电特性。

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