A method to reduce self-heating effect in a-Si TFT circuit applications

摘要

In this paper, the self heating effecting a-Si TFT is investigated. First, the self heating effect on the large-width a-Si TFT, composed of different unit cell width, is studied. The self heating effect on the a-Si TFT with different channel length is further discussed. Based on the results of these two topics, a method is proposed so that the reliability against self heating effect is improved for the large-width a-Si TFTs. The threshold voltage shift for the devices with different unit cell width and channel length is compared and discussed.