Low-temperature and Low-Voltage, Solution-Processed Metal Oxide n-TFTs and Flexible Circuitry on Large-Area Polyimide Foil

摘要

In this article, we report on high-performance solution-based n-type metal oxide TFTs processed directly on polyimide foil and annealed at 250 °C. Saturation mobilities exceeding 2 cm~2/(Vs) and l_(on)/l_(off) ratios beyond 10~B have been achieved. Using these oxide n-TFTs, fast and low-voltage flexible circuitry is presented. Furthermore, a complete 8-bit RFID transponder chip, containing 294 oxide n-TFTs has been fabricated. Both high-speed and low-voltage operation makes the presented oxide n- TFT technology suited for both the pixel driving and embedded line-drive circuitry at the borders of flexible AMOLED displays.