Effects of Electrochemical Oxidation Treatment on Ballistic Electron Surface-emitting Display of Porous Silicon

摘要

BSD is a promising electronic source for FED. With electrochemical oxidation current density and time increasing, threshold voltages of BSD increase while the maximum efficiency decrease. Electro-forming appears which lead to dramatic increase in emission current. The linear fitted F-N curves demonstrate field-induced tunneling process occurs in oxide film.