首页> 外文会议>Electronics Division meeting of the Ceramic Society of Japan >The effect of oxygen vacancies on the dielectric responses of BaTiO_3 based ceramics in the ultra-wide frequency range
【24h】

The effect of oxygen vacancies on the dielectric responses of BaTiO_3 based ceramics in the ultra-wide frequency range

机译:在超宽频率范围内氧空位对BaTiO_3基陶瓷介电响应的影响

获取原文

摘要

The effect of oxygen vacancies and their migrations on the dielectric responses of BaTiO_3 (BT) ceramics and (Ba, Ca)(Ti, Zr)O_3 (BCTZ) ceramics was studied using wideband dielectric spectroscopy. Both dipole and ionic polarization of BT ceramics after annealing in a reducing atmosphere markedly decreased. To elucidate the decrease of dipole and ionic polarization, we observed the domain width and the crystal structure of BT ceramics annealed in different PO_2. The mass fractions of constituted phases in 90° domain were calculated using the refinement of XRD patterns to explain the degradation of ionic polarization by oxygen vacancies. From the results above, we judged that the decrease of dipole polarization was due to the domain wall clamping by oxygen vacancies, while that of ionic polarization was attributable to the lattice hardening by the incorporation of oxygen vacancies into the BT lattice. In the case of BCTZ ceramics, dipole polarization showed the same way as BT ceramics with annealing conditions but the ionic polarization was independent of PO_2 in annealing because of anti-reducing behavior of BCTZ ceramics. On the basis of the effect of oxygen vacancy in BT ceramics and BCTZ ceramics, we could clarify the oxygen vacancy migration in BCTZ ceramics under high direct-current voltage (DCV).
机译:利用宽带介电谱研究了氧空位及其迁移对BaTiO_3(BT)陶瓷和(Ba,Ca)(Ti,Zr)O_3(BCTZ)陶瓷介电响应的影响。在还原性气氛中退火后,BT陶瓷的偶极极化和离子极化均显着降低。为了阐明偶极子和离子极化的减小,我们观察了在不同PO_2中退火的BT陶瓷的畴宽和晶体结构。使用XRD谱图的细化计算了90°域内构成相的质量分数,以解释氧空位对离子极化的降解作用。根据以上结果,我们认为偶极极化的减少是由于氧空位对畴壁的钳制,而离子极化的下降归因于氧空位结合到BT晶格中而使晶格硬化。在BCTZ陶瓷的情况下,偶极极化在退火条件下与BT陶瓷表现出相同的方式,但是由于BCTZ陶瓷的抗还原性能,在退火过程中离子极化与PO_2无关。根据BT陶瓷和BCTZ陶瓷中氧空位的影响,我们可以弄清楚在高直流电压(DCV)下BCTZ陶瓷中氧空位的迁移。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号