首页> 外国专利> High frequency dielectric ceramic composition and manufacturing method thereof, high frequency dielectric ceramic and manufacturing method thereof, and high frequency circuit element using the same

High frequency dielectric ceramic composition and manufacturing method thereof, high frequency dielectric ceramic and manufacturing method thereof, and high frequency circuit element using the same

机译:高频介电陶瓷组合物及其制造方法,高频介电陶瓷及其制造方法以及使用其的高频电路元件

摘要

There is provided a dielectric ceramic composition for high-frequency use represented by a composition formula of a(Sn,Ti)O 2 -bMg 2 SiO 4 -cMgTi 2 O 5 -dMgSiO 3 . In the composition formula, a, b, c and d (provided that a, b, c and d are mol%) are within the following ranges: 4‰¤a‰¤37, 34‰¤b‰¤92, 2‰¤c‰¤15 and 2‰¤d‰¤15, respectively, and a+b+c+d=100. The dielectric ceramic composition for high-frequency use has a relative permittivity µ r of 7.5-12.0, a Q m ×f o value of not less than 50000 (GHz) and an absolute value of a temperature coefficient Ä f of resonance frequency f o of not more than 30 ppm/°C.
机译:提供一种由a(Sn,Ti)O 2 -bMg 2 SiO 4 -cMgTi 2 O 5 -dMgSiO 3的组成式表示的高频电介质陶瓷组合物。在组成式中,a,b,c和d(假设a,b,c和d为mol%)在以下范围内:4‰a‰¤37、34‰b‰¤92、2‰分别为¤c‰¤15和2‰¤d‰¤15,并且a + b + c + d = 100。高频用介电陶瓷组合物的相对介电常数μr为7.5-12.0,Q m×fo值不小于50000(GHz),并且谐振频率fo的温度系数Äf的绝对值不大于500。高于30 ppm /°C。

著录项

  • 公开/公告号JP5582406B2

    专利类型

  • 公开/公告日2014-09-03

    原文格式PDF

  • 申请/专利权人 宇部興産株式会社;

    申请/专利号JP20100540491

  • 发明设计人 河野 孝史;山永 正孝;岡部 敦;

    申请日2009-11-25

  • 分类号C04B35/20;H01B3/12;H01P7/10;H01P7/04;H01P7/08;

  • 国家 JP

  • 入库时间 2022-08-21 16:13:16

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