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A study on wafer level molding for realizing 3-D integration

机译:用于实现3D集成的晶圆级成型的研究

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摘要

3D-IC packaging using through silicon via technology has been extensively developed to meet small form factor and low power consumption demands for next generation devices. A wafer molding technology is required for 3D chip integration. Wafer molding is carried out in the chip-to-wafer process to ensure suitable levels of mechanical strength are reached. The key to wafer level mold processing is the reduction of warpage. This paper discusses the material developments and steps taken for process optimization in the wafer molding process to reduce warpage. A 2 chip stack arrangement was used for this investigation, with a 12 inch bottom wafer containing vias, and 9×9 mm top chip wafers. The evaluation was run systematically in three major phases. In the first phase, the levels of warpage experienced during the packaging processes were simulated. The evaluation of three different types of material (Epoxy, Silicone and Hybrid) was carried out in the second phase. The third and final phase involved the testing for warpage at room and high temperature conditions of the epoxy and hybrid based resins. The silicone based resin was also evaluated with varying amounts of filler and adhesion promoter. The modulus and coefficient of thermal expansion (CTE) were found to be extremely important, since lowering this property would result in low warpage levels, both at room and high temperatures, which control the water absorption and temperature cycle reliability in the silicone based resin were established.
机译:使用硅通孔技术的3D-IC封装已得到广泛开发,可满足下一代设备的小尺寸和低功耗要求。 3D芯片集成需要晶圆成型技术。晶圆成型是在芯片到晶圆的过程中进行的,以确保达到合适的机械强度水平。晶圆级模具加工的关键是减少翘曲。本文讨论了为了减少翘曲而在晶片成型工艺中进行工艺优化的材料开发和步骤。 2芯片堆叠结构用于此研究,其中12英寸底部晶圆包含通孔,而9×9 mm顶部芯片晶圆则包含通孔。评估分为三个主要阶段系统地进行。在第一阶段,模拟了包装过程中经历的翘曲水平。在第二阶段对三种不同类型的材料(环氧树脂,有机硅和混合材料)进行了评估。第三阶段也是最后阶段涉及环氧树脂和杂化树脂在室温和高温条件下的翘曲测试。还用不同量的填料和增粘剂评估了有机硅基树脂。发现降低模量和热膨胀系数(CTE)非常重要,因为降低该性能将导致在室温和高温下均保持较低的翘曲度,从而控制了有机硅基树脂的吸水率和温度循环可靠性。已确立的。

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