Analysis and Control of Interface Reactions in Microelectronic Systems

摘要

Multilayer, multicomponent architectures are ubiquitous in microelectronic systems over size scalesranging from microns to nanometers. During device fabrication and use reactions at component interfaces oftenoccur and lead to both beneficial and deleterious product phases. The analysis of the reactions is an essentialcomponent in developing strategies for reaction control. An effective approach for the analysis of interface reactionsis presented based upon the interpretation of the interface microstructure evolution in terms of the operativemulticomponent diffusion pathway where the influence of initially steep concentration gradients is included in theexamination of reaction phase sequencing. From the established diffusion pathway a novel kinetic biasing approachcan be devised as a robust means to engineer thermodynamic and mechanical compatibility including thedevelopment of an in-situ diffusion barrier. The degree of kinetic control can be augmented further by means oftailoring the diffusion pathways to establish the preferred interfacial reaction sequences. Furthermore, the extent ofthe interfacial control can be utilized to limit the formation of undesired interfacial reactions. The analysis andcontrol concepts are illustrated with an example from high temperature SiC applications.