Microsecond pulsed DC matching measurements on MOSFETs in strong and weak inversion

摘要

We present a first successful attempt to use microsecond DC pulses for matching measurements on 65-nm MOS transistors down to low current levels. We demonstrate that the interface states that contribute to the mismatch (if they indeed do so) in the weak and moderate inversion region must have charging and discharging time constants below 1 μs.