POLO BACK JUNCTION: AN ELEGANT WAY TO IMPLEMENT ELECTRON-COLLECTING PASSIVATING CONTACTS IN P-TYPE INDUSTRIAL SILICON SOLAR CELLS

摘要

We demonstrate the fabrication of screen-printed p-type back junction solar cells with an aluminum front grid and a poly-Si on oxide electron-collecting passivating contact at the rear side. The high potential of this cell concept is demonstrated with an implied open-circuit voltage of 730 mV and an implied filled factor of 85.5%, measured on a cell precursor. The best cell from a batch of 7 cells has an open-circuit voltage of 695.6 mV and an efficiency of 22.3%, independently confirmed by ISFH CalTeC.