532 NM LASER TREATED SELECTIVE EMITTER PROFILES STUDY WITH SIMS AND ECV TECHNICS

摘要

In this work we present SIMS and ECV analysis to study the junction profile of selective emitter after a treatment by 532 nm laser. Initial emitter is obtained in low pressure diffusion tube of POCL3 and has a junction depth of 0.463μm and surface concentration of 1.32 1020 cm-3. Different laser intensity are used to optimize the final profile of selective emitter. The junctions are characterized by four point probe for sheet resistance measurement and their profile measured by SIMS and ECV. In the wide spectra of laser intensity used, from 2.8 to 6A corresponding to a power of 0.02 to 0.70W, we have found the optimized profile to use in the solar cell structure. Surface concentration profile and junction depth are compared for each laser treatment with the as diffused profile.