HIGHLY SENSITIVE ORGANIC PHOTODETECTOR BASED ON SI/NIPCTS/PEDOT: PSS BULK HETROJUNCTION BLEND

摘要

This research reports on the fabrication and characterization of an Si/NiPcTs/PEDOT:PSS bulk hetrojunction blend with different (PEDOT:PSS) concentration. A thin film was deposited by spin coater deposition method on silicon wavers (Si) N-type direction (111) of thickness 100nm. The optical properties were studied by using UV-Vis absorption spectra and photoluminescence spectra (PL) at annealing temperature of wafer 100°C. The decreasing of the (PEDOT:PSS) concentration leads to increase absorbance of films with optical peak shifts position to low energy side of spectra. The values of optical energy gap of (NiPcTs/PEDOT:PSS) thin film between (1.6-1.8)eV for Q band and (2.75-3.2)eV for B band for direct energy band. The optical energy gap obtained from photoluminescence spectra for NiPcTs/PEDOT:PSS bulk heterojunctions blend thin films with excitation wavelength (338-352) nm is Very approach to energy gap obtained by UV-VIS spectrum. The current-voltage characteristics of the diode were measured at room temperature under dark and light condition. The detectivity and responsivity is very low with conc. 0.5 at 350nm and 550nm but disappear at 800 nm. The times values of Rise time were 0.75μsec, Transit time (400-500)μsec and Life time (160-180)usec.