CHANGE IN OUTPUT POWER BY LIGHT SOAKING FOR HIGH EFFICIENCY CRYSTALLINE SILICON PHOTOVOLTAIC MODULES

摘要

The effects of the light-induced degradation for photovoltaic (PV) modules of n-type monocrystalline silicon heterojunction (SHJ) and p-type monocrystalline silicon passivated emitter and rear cell (PERC) were investigated. These module types were installed at National Institute of Advanced Industrial Science and Technology (AIST), then comparison between the outdoor measurement of each array and indoor measurement of the modules was carried out. In the case of SHJ, there was almost no difference in the change in normalized maximum power between short-circuit and open-circuit conditions, then no significant decrease in performance ratio (PR) occurred. On the other hand, PR of PERC was decreased with only a few amount of irradiation by light soaking at outdoor exposure.