ANALYSIS OF LOW TEMPERATURE CURRENT-VOLTAGE MEASUREMENTS UNDER ILLUMINATION OF SILICON HETEROJUNCTION SOLAR CELLS

摘要

In this paper we presented the simulation study of low temperature light output performacne of p-type silicon heterojunction solar cells. It is shown that fill factor measured as a function of temperature is strongly connected with presence of barriers for carrier collection and thus can be employed to gain an insight on the properties of heterojunctions in solar cell. For solar cells with low defect states at the interfaces, the temperature of FF maxima is directly related with conduction band offset. Results show strong influence of the parasitic Schottky barrier presented at the collection contact of the solar cell on the open-circuit voltage at low temperatures. The onset of the open-circuit voltage saturation is directly related to the Schottky barrier value. Presented study shows that measuring of temperature dependent output parameters of heterojunction solar cell can provide information about quality of collection contacts as well as can be used for estimation of conduction band offset.