INTERDIGITATED BACK CONTACT DESIGN COMBINED WITH SILICON HETEROJUNCTION TECHNOLOGY: A PROMISING CANDIDATE FOR VERY HIGH EFFICIENCY INDUSTRIAL SOLAR CELLS

摘要

Interdigitated back contact cells present the advantages to reach very high current densities (J_(sc)) when compared to the standard solar cell technology with a front grid. Conversely, hetero junction technology enables very high open-circuit voltages, thanks to passivated contacts. The combination of both technologies, called 1BC-HJT technology, allows the achievement of very high efficiencies as presented by Panasonic this year. This work presents our first IBC-HJT results with a simple cell process. Effects of front and back passivation layer properties are presented while a main limitation of the in-situ shadow masking to pattern the doped amorphous layers is discussed. Best open-circuit voltages (V_(oc)) up to 733 mV and J_(sc) values above 40 mA/cm~2 demonstrate the potential and industrial relevance of such technology.