首页> 外文会议>European Photovoltaic Solar Energy Conference and Exhibition >A Manufacturable, Non-plated, Non-Ag Metallization based 20.44 Efficient, 243 cm~2 Area, Back Contacted Solar Cell on 40 μm Thick Mono-Crystalline Silicon
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A Manufacturable, Non-plated, Non-Ag Metallization based 20.44 Efficient, 243 cm~2 Area, Back Contacted Solar Cell on 40 μm Thick Mono-Crystalline Silicon

机译:基于20.44%的20.44%效率,243cm〜2面积的可制造,非镀,非Ag金属化,背面接触过太阳能电池40μm厚的单晶硅

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摘要

We present a disruptive mono-crystalline silicon based solar photovoltaic technology which dramatically reduces cost, while providing very high efficiency, enhanced energy yield, and enabling capability for lightweight flexible modules with reduced BOS costs. A 20.44% efficiency cell on ~40 μm monocrystalline silicon absorber is presented. The full-square cell substrate size is 243 cm~2. The cell does not use expensive Ag matellization or Cu plating metallization. It is manufactured using an inexpensive Al metallization structure. The technology enables flexible cells and modules as well as the nimbleness to scale the cell voltage and current while delivering the same high output power. Scaled down current and scaled up voltage compared to conventaional silicon cells enables substantially reduced ohmic power dissipation loss in modules and installed PV systems, while paving the way for larger substrate sizes and inexpensive embedded power electronics integrated within the cells and modules.
机译:我们介绍了一种破坏性的单晶硅太阳能光伏技术,可大大降低成本,同时提供非常高的效率,增强的能量产量,并为轻质灵活模块实现具有降低的BOS成本的能力。提出了20.44%的效率细胞〜40μm单晶硅吸收器。全方细胞基板尺寸为243cm〜2。该电池不使用昂贵的Ag Matellization或Cu电镀金属化。它是使用廉价的Al金属化结构制造的。该技术使灵活的单元和模块能够以及凹陷,以缩放电池电压和电流,同时提供相同的高输出功率。与规范硅电池相比,缩小电流和缩放电压使模块中的欧姆功耗损耗大大降低,并且安装了PV系统,同时为更大的基板尺寸和集成在电池和模块内集成的廉价嵌入式电力电子设备的方式铺平道路。

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