Boron Doped Zinc Oxide Films Grown by DC Reactive Magnetron Sputtering

摘要

Zinc oxide (ZnO) thin films with varying boron (B) content were prepared on soda lime glass substrates by reactive DC magnetron sputtering. Structural, optical and electrical properties of ZnO films were investigated as a function of Bdoping level (0-2 at.%) in the target. X-ray diffraction analysis results indicated that all films were polycrystalline with (002) orientation which slightly shifted in 2θ values with increase in B-doping concentration in the target. The lowest resistivity obtained in this work was 2.06×10~(-3) Ωcm which corresponds to a carrier concentration and mobility of 3.698×10~(20) cm~(-3) and 8.189 cm~2/Vs, respectively. Optical characterization results showed that all ZnO films had an optical transparency of above 95% in the visible region, which then decreased in the near-infrared region. The optical band gap of the ZnO film ranges from 3.27 to 3.40 eV depending on B-concentration in the targets.