SELECTIVE DOPING METHOD FOR CRYSTALLINE SILICON SOLAR CELLS WITH CONTINUOUS WAVE LASER AND LIGHT ABSORPTION LAYER

摘要

Laser doping with absorption layer has been investigated for photovoltaic applications. For fabrication of selectively doped regions, we adopted an absorption layer on top of phosphosilicate glass layer which was produced together with furnace diffusion. The laser beam is changed into thermal energy at the absorption layer and heats the surface of c-Si. During the laser irradiation, the phosphosilicate glass layer serves as dopant source. By this method, without complete melting the surface of c-Si, the sheet resistances of 48 or 52 Ω/□ were obtained at the laser power of 45 W and laser scan speed of 150 - 190 mm/s. Although absorption layer formation resulted in narrow process window, our result shows a potential for photovoltaic applications.