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CHANGES IN CONTACT RESISTANCE OF DIFFERENT METALS TO MAGNETRON SPUTTERED ITO WHILE ANNEALING

机译:在退火时,不同金属的接触电阻变化磁控溅射ITO

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In this work we compare the contact formation of silver, aluminium, chrome, titanium, nickel, palladium, and copper on magnetron sputtered indium tin oxide (ITO) and the change of the contact resistance during a low temperature annealing step. Test structures after Schroder and Meier were prepared to measure the sheet resistance of the ITO layers on glass, as well as the specific contact resistance between ITO and the metal. We saw for all metals besides aluminium no significant changes in the contact resistance after annealing. The sheet resistances of the ITO layers changed after the annealing depending on the base pressure before starting the sputter process. No significant changes in the optical properties of the ITO layers could be observed.
机译:在这项工作中,我们将银,铝,铬,钛,​​镍,钯和铜的接触形成进行比较,磁控溅射铟锡(ITO)和低温退火步骤期间接触电阻的变化。施罗德和Meier之后的测试结构准备测量玻璃上ITO层的薄层电阻,以及ITO和金属之间的特定接触电阻。除了铝之外,我们看到所有金属除了退火后没有明显的接触电阻变化。在开始溅射过程之前,ITO层的薄片电阻根据基础压力而改变。可以观察到ITO层的光学特性的显着变化。

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