Numerical analysis of gain saturation characteristics of semiconductor optical amplifier using tunnel injection structure

摘要

We provide the numerical analysis result of the gain saturation characteristics of a semiconductor optical amplifier (SOA) using the tunnel injection structure that we proposed. The tunnel injection SOA has the features of the carrier reservoir and the control of the carrier relaxation speed. The analysis suggested that the tunnel injection SOA improves the output power by 4.9 dB at 100 Gbps PRBS without signal distortion. Such an advantage is based on the mechanism of the filling of carriers during the light amplification that reduces the carriers.