Development of self-aligned T-gate pHEMT technology

摘要

Self-aligned 0.25 μm T-gate pHEMT technology was described in this paper. Basic requirements of the self-aligned technology for gate profile were presented. Metallization system and annealing parameters providing low resistance ohmic contacts were chosen. Current-voltage characteristics, capacity-voltage characteristics and current gain of routine and self-aligned pHEMT were compared. The self-aligned technology provides an increase in transconductance S and drive current Ids of 10…15% comparing with routine process. Cutoff frequency increased by 15 GHz and reached Ft ∼70 GHz.