Optimization and fabrication of low stress-low temperature silicon oxide cantilevers

摘要

Modern lab-on-a-chip systems can benefit from integration of NEMS/MEMS and CMOS technology with emphasis on low temperature processing. In the present work process parameters for deposition of silicon oxide (SiOx) by Inductively Coupled Plasma CVD (ICPCVD) at low temperature (70°C) are optimized. The sacrificial layer Poly(methyl methacrylate) (PMMA) is in-house prepared and optimized. This PMMA sacrificial solution not only gives a low cost wide range of viscosity solutions, but it is also low temperature NEMS process compatible. With optimizations mentioned above it has been possible to fabricate the whole device without exceeding the thermal budget 100°C. To the best of author''s knowledge this is the first report on a sub 100°C, surface micromachined SiOx cantilevers deposited by ICPCVD and using PMMA as sacrificial layer for low temperature NEMS applications.