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A standard-cell library suite for deep-deep sub-micron CMOS technologies

机译:用于深亚微米CMOS技术的标准单元库套件

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The continuous scaling of CMOS transistor and interconnect geometries brings to light novel challenges regarding the design of VLSI systems in the nanoscale era. On the other hand, most of the forthcoming deep-deep submicron technologies are not yet mature to be used for fabrication. Hence, the development of standard-cell libraries at the nanometer regime is emerging, in order to estimate the behavior of complex systems in short-term technology nodes. In this paper, we introduce a standard-cell library generator flow for sub-65nm nodes, based on scaling rules presented in the literature. Our goal is to create a set of complete standard cell libraries enabling the design of large digital systems in technologies not yet available for fabrication. The generated libraries are compatible with the state-of-the-art industrial tool flows and they have been evaluated by benchmarks of medium and large complexity.
机译:CMOS晶体管和互连几何结构的连续缩放带来了有关纳米时代VLSI系统设计的新挑战。另一方面,大多数即将到来的深-深亚微米技术尚未成熟,无法用于制造。因此,出现了在纳米状态下标准单元库的开发,以便估计短期技术节点中复杂系统的行为。在本文中,我们基于文献中提出的缩放规则介绍了适用于65nm以下节点的标准单元库生成器流程。我们的目标是创建一套完整的标准单元库,从而以尚未可用于制造的技术设计大型数字系统。生成的库与最新的工业工具流程兼容,并且已通过中等和大型复杂性的基准进行了评估。

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