Simulation Study on Pulse Width Effect of the Damage of High Power Electromagnetic Pulse to Transistors

摘要

Aiming at the status in quo that semiconductor microelectronic devices are more and more vulnerable to the high power electromagnetic pulse(EMP), simulation is performed of the pulse width effect of the NP.N type of Transistors under the high power EMP damage by Medici. The results conform to the experiential formula of the EMP damage to semiconductor devices and are of reference value to the research of the electronic equipment enhancement against EMP.