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Magnetoresistance of Flexible CNT-Fe Composite Thin Films in a Dynamic Electric Field

机译:柔性CNT-Fe复合薄膜在动态电场中的磁阻

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Room temperature magnetoresistance (MR) under AC electric field of a composite of carbon nanotubes (CNT) and Fe nanoparticles dispersed in a base polymer of epoxy resin and amorphous carbon is reported. The films made in varying weight concentrations (1% to 3% of CNT and 1% to 5% of Fe) reveal MR dependence over the entire frequency (0-1kHz) and amplitude range (0-3V). MR is found to increase with increase in either Fe or CNT concentration. The experiments reveal an enhanced MR as compared to the MR under a static electric field. On passing an alternating electric field through a CNT, the impedance increases due to the onset of the capacitive and inductive impedance, in addition to the already existing electrical resistance. The charge storage capacity of CNTs leads to the capacitive impedance. When electric field is applied parallel to the tube axis, electron flux along circumference is diverted into a helix current, similar to nanocoils. The Fe nanoparticles enhance the magnetic field concentration in the CNTs leading to an increased inductor like property of CNTs. The dynamics of the CNT-Fe system has been modeled using Maxwell's electromagnetic equations, with the Fe nanoparticles contributing to an additional current density in the form of spin polarized electrons. Hysteresis in MR is observed on sweeping the magnetic field. These highly tunable, flexible thin films can be used in room temperature magnetic field sensors and spintronic devices like magnetic random access memory (MRAM).
机译:报道了在碳纳米管和碳纳米管的复合物在交流电场下的室温磁致电阻(MR),该碳纳米管和铁纳米颗粒分散在环氧树脂和无定形碳的基础聚合物中。以不同的重量浓度(1%至3%的CNT和1%至5%的铁)制成的薄膜在整个频率(0-1kHz)和振幅范围(0-3V)上均显示出MR依赖性。发现MR随着Fe或CNT浓度的增加而增加。实验表明,与静电场下的MR相比,MR有所增强。在使交流电场通过CNT时,除了已经存在的电阻之外,由于电容性和电感性阻抗的出现,阻抗也会增加。 CNT的电荷存储容量导致电容性阻抗。当平行于管轴施加电场时,沿周向的电子通量被转移到一个螺旋电流中,类似于纳米线圈。 Fe纳米颗粒增强了CNT中的磁场浓度,从而导致CNT的类似电感器的性能增加。碳纳米管-铁系统的动力学已经使用麦克斯韦的电磁方程式进行了建模,其中铁纳米颗粒以自旋极化电子的形式贡献了额外的电流密度。在扫描磁场时会观察到MR中的磁滞现象。这些高度可调谐的柔性薄膜可用于室温磁场传感器和自旋电子设备,例如磁性随机存取存储器(MRAM)。

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