Reliability Properties and Current Conduction Mechanisms of HfO_2 MIS Capacitor with Dual Plasma Treatment

摘要

The incorporation of nitrogen in HfO_2 gate dielectrics has been reported to be beneficial for electrical performance. The improvement in the electrical characteristics of HfO_2 thin film with plasma nitridation process or plasma fluorination process has also been examined. In this study, dual plasma, CF4 pre-treatment and nitrogen post-treatment, treatments were performed on HPO_2 MIS capacitor for further improvement on reliability characteristic. We examine the reliability properties and the current conduction mechanism of HfO_2 thin films. The frequency dispersion and constant voltage stress (CVS) characteristics of the samples were analyzed to estimate the improvement. According to the present study, dual plasma treatment could be better than single plasma treatment and would be an effective approach for HfO_2 dielectric improvement.