Bulk FinFET fabrication with new approaches for oxide topography control using dry removal techniques

摘要

This work presents a process to fabricate FinFETs in bulk silicon with advancements in critical fabrication steps such as STI trench oxide recess and adjustment of fin height. These steps are accomplished with the adoption of Siconi™ Selective Material Removal (SMR™) in the fabrication flow. FinFETs obtained with this new integration scheme were tested in a co-fabrication process flow proposed to integrate planar CMOS and FinFETs in the same wafer. Morphological and electrical results indicate perfectly filled trenches, better fin height control and bulk FinFET static performance similar to planar CMOS.