Hall effect in micro poly-Si Hall devices has been evaluated to analyze electron transport in poly-Si films. It is observed that the Hall voltage (VH) has offset voltage (Vo) even when magnetic field (B) is zero whereas the change of Vh (AVh) is proportional to B. The polarities of both Vo and AVH are reversed when the direction of the control current is reversed. This means that Vo is caused by not the potential barrier at the grain boundaries but the zigzag path of the electron transport.
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