Magnetic-Field Area Sensor Using Poly-Si Micro Hall Devices

摘要

In this letter, a magnetic-field area sensor using poly-Si micro Hall devices is reported. A matrix array of Hall devices is formed on a glass substrate using fabrication processes compatible with poly-Si thin-film transistors. Here, 3 $times$ 3 Hall devices are arrayed every 1 $times$ 1 mm, and the dimension of the principal part is less than $hbox{50} times hbox{50} muhbox{m}$. A compensation technique of the characteristic variation is used, and it is confirmed that the area sensing is correctly conducted. This sensor presents a novel application using thin-film technologies for giant-micro flexible electronics.