首页> 外文会议>European Conference on Fracture >Contribution of plastic dissipation to interfacial adhesion in IC metallization systems
【24h】

Contribution of plastic dissipation to interfacial adhesion in IC metallization systems

机译:塑性耗散对IC金属化系统中界面附着力的贡献

获取原文

摘要

In order to evaluate local adhesion of interface in thin film stuck, a new micro-scale technique has been developed. The new micro-scale technique was simulated by finite element analysis and the contribution of plastic dissipation to interfacial adhesion was evaluated. In the micro-scale technique, the interface adhesion was evaluated to be 5.0±0.9 J/m2 in the numerical simulation of interface crack extension behavior. However, by eliminating additional energy which was dissipated with the plastic deformation close to the interface crack tip, the interface adhesion was evaluated to be 3.0 J/m2. This result indicates that the large amount of plastic dissipation occurred near the interface crack tip and it is necessary to consider the plastic dissipation in the evaluation of interfacial adhesion in Cu metallization systems.
机译:为了评估粘附在薄膜中的界面的局部粘附性,已经开发了一种新的微尺度技术。通过有限元分析模拟了新的微尺度技术,并评估了塑性耗散对界面粘附的贡献。在微尺度技术中,在界面裂纹扩展行为的数值模拟中,界面附着力被评估为5.0±0.9 J / m2。然而,通过消除由于靠近界面裂纹尖端的塑性变形而耗散的额外能量,界面粘合力评估为3.0 J / m2。该结果表明,在界面裂纹尖端附近发生了大量的塑性耗散,因此在评估铜金属化系统的界面附着力时必须考虑塑性耗散。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号