Ferroelectric Properties and Microstructures of Pr6O11-Doped Bi4Ti3O12 Thin Films

摘要

Pr6O11-doped bismuth titanate (BixPryTi3O12∶ BPT) thin films with random oriention were fabricated on Pt/Ti/SiO2/Si substrates by rf magnetron sputtering technique,and the structures and ferroelectric properties of the films were investigated.XRD studies indicated that all of BPT films consisted of single phase of a bismuth-layered structure with well-developed rod-like grains.For samples with y=0.06,0.3,1.2 and 1.5,ferroelectric hysteresis loops were characterized by large leakage current,whereas for samples with y=0.6 and 0.9,ferroelectric hysteresis loops were the saturated and undistorted hysteresis loops.The remanent polarization (Pr) and coercive field (Ec) of the BPT Film with y=0.9 were above 35μC/cm2 and 80KV/cm,respectively.After 3 × 1010 switching cycles,20％ degradation of 2Pr is observed in the film with y=0.9.