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Low-Temperature Firing and Microwave Dielectric Properties of Zn3Nb2O8 Ceramics with CuO-V2O5-Bi2O3

机译:CuO-V2O5-Bi2O3的Zn3Nb2O8陶瓷的低温烧结和微波介电性能

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The influence of CuO-V2O5-Bi2O3 addition on the sintering behavior,phase composition,microstructure and microwave dielectric properties of Zn3Nb2O8 ceramics were investigated.The codoping of CuO,V2O5 and Bi2O3 can significantly lower the sintering temperature of Zn3Nb2O8 ceramics from 1150°C to 900°C.The Zn3Nb2O8-0.5wt% CuO-0.5wt% V2O5-2.0wt% Bi2O3 ceramic sintered at 900°C showed a relative density of 97.1%,a dielectric constant (εr) of 18.2,and a quality factor (Q×f) of 36781 GHz.The dielectric properties in this system exhibited a significant dependence on the relative density,content of additives and sintering temperature.The relative density and dielectric constant (εr) of Zn3Nb2O8 ceramics increased with increasing CuO-V2O5-Bi2O3 additions.And also the relative density and dielectric constant of Zn3Nb2O8 ceramics increased by the augment of the sintering temperature.
机译:研究了CuO-V2O5-Bi2O3的添加对Zn3Nb2O8陶瓷的烧结行为,相组成,微观结构和微波介电性能的影响。CuO,V2O5和Bi2O3的共掺杂可将Zn3Nb2O8陶瓷的烧结温度从1150°C显着降低至1150°C。 900°C烧结的Zn3Nb2O8-0.5wt%CuO-0.5wt%V2O5-2.0wt%Bi2O3陶瓷的相对密度为97.1%,介电常数(εr)为18.2,品质因数(Q ×f)为36781 GHz。该系统的介电性能与相对密度,添加剂含量和烧结温度密切相关.Zn3Nb2O8陶瓷的相对密度和介电常数(εr)随着CuO-V2O5-Bi2O3的添加而增加随着烧结温度的升高,Zn3Nb2O8陶瓷的相对密度和介电常数也随之增加。

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