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Preparation of Low Dielectric Constant Porous Silicon Nitride Ceramics for Radome Application

机译:基拉麦施用低介电常数多孔氮化硅陶瓷的制备

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The porous silicon nitride ceramics with low dielectric constant and high flexural strength were obtained by adding pore-forming agent through partial sintering technique. The effects of pore-forming agent amount on the properties of porous silicon nitride ceramics were investigated. Microstructure was analyzed by means of scanning electron microscopy. The results show that the porous structure is formed by the overlap of pillar β-Si_3N_4 with high length diameter ratio. The porosity of samples rises with the increase of pore-forming agent content, which leads to the decrease of the dielectric constant and loss, but the decrease of flexural strength. When the pore-forming agent of PMMA with mass fraction of 20% was added, the volume density, porosity, dielectric constant and loss of porous silicon nitride ceramics were 1.17g/cm , 66.5%, 2.33 and 0.8×10~(-3) respectively, with higher flexural strength of 75MPa which is satisfactory as low dielectric material for core layer of broadband radome.
机译:通过通过部分烧结技术加入孔形成剂,获得具有低介电常数和高弯曲强度的多孔氮化硅陶瓷。研究了孔隙成型剂对多孔氮化硅陶瓷性能的影响。通过扫描电子显微镜分析微观结构。结果表明,多孔结构由高长度直径比的柱β-Si_3N_4重叠形成。样品的孔隙率随着孔隙成型剂含量的增加而上升,这导致介电常数和损失的降低,但弯曲强度的降低。当加入具有20%质量分数的PMMA的孔隙成型剂时,体积密度,孔隙率,多孔氮化硅陶瓷损耗为1.17g / cm,66.5%,2.33和0.8×10〜(-3 )分别具有较高的弯曲强度为75MPa,其令人满意的宽带无线罩芯层的低介电材料。

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