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Effect of Sm2O3 Additives on the Rod-Like β-Si3N4 Crystal of Porous Silicon Nitride Fabricated by Reaction-Bonded

机译:SM2O3添加剂对通过反应键合制造的多孔氮化硅棒状β-Si3N4晶体的影响

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Sm2O3 and MgO as a sintering additives to fabricated porous silicon nitride by reaction-bonded.The phase of as-produced silicon nitride characterized by XRD-diffraction.The microstructure of product was investigated by SEM.The samples were machined into test bar for flexural strength testing.Using Archimedes theory testing the porosity of porous silicon nitride.MgO have restrain effect on the growth of rod-like silicon nitride,because of produce a restrain layer which is MgO reacted with SiO2 on the surface of silicon.,the microstructure of crystal is particle like,the maximum flexural strength is 48MPa with porosity of 35%.Sm2O3 can assistant the growth of high aspect ratio Si3N4 crystal at beginning temperature of 1300°C for it's low melt point and low viscidity in liquid state,the as-product's morphology is rod-like and the flexural strength is as high as 300 MPa when the porosity is 30%,high than the sample that of low rod-like crystal content.
机译:SM2O3和MgO作为烧结添加剂,通过反应键合制造多孔氮化硅。通过SEM研究了产品的微观结构。通过SEM研究了产物的微观结构。将样品加工成弯曲强度的试验杆。测试。测试多孔硅氮化硅的孔隙率为的孔隙率。由于产生抑制层,这对氧化棒状氮化硅的生长具有抑制对棒状氮化硅的生长的影响,这是MgO在硅表面上与SiO 2反应的MgO。,晶体的微观结构是颗粒状的,最大弯曲强度是48MPa,孔隙率为35%.sm2O3可以助理高纵横比Si3N4晶体在开始温度为1300℃的液态低熔点和低粘粘剂时,液态的低熔点形态学是棒状,当孔隙率为30%时,弯曲强度高达300mPa,高于低棒状晶体含量的样品。

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