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Fast Techniques for Standby Leakage Reduction in MTCMOS Circuits

机译:MTCMOS电路待机泄漏减少的快速技术

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Technology scaling causes subthreshold leakage currents to increase exponentially. Therefore, effective leakage minimization techniques must be designed. In addition, for a true low-power solution in System-on-Chip (SoC) design, it has to be tightly integrated into the main design environment. This paper presents two design techniques to effectively solve the sleep transistor sizing and distribution problem in MTCMOS circuits. The introduced First-Fit and Set-Covering approaches achieve lower leakage at an order of magnitude reduction in CPU time compared with other techniques in the literature. In addition, an automatic MTCMOS design environment is developed and integrated into the Canadian Microelectronics Corporation (CMC) digital ASIC design flow.
机译:技术缩放导致亚阈值泄漏电流呈指数增长。因此,必须设计有效的泄漏最小化技术。此外,对于片上系统(SOC)设计的真正的低功耗解决方案,它必须紧密地集成到主要设计环境中。本文呈现了两种设计技术,可以在MTCMOS电路中有效解决睡眠晶体管尺寸和分布问题。与文献中的其他技术相比,引入的第一配合和设定覆盖方法以CPU时间的幅度减小率降低。此外,开发并集成了自动MTCMOS设计环境并集成到加拿大微电子公司(CMC)数字ASIC设计流中。

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