A New Level Shifter in Ultra Deep Sub-Micron for Low to Wide Range Voltage Applications

摘要

A level shifter aimed at ultra low core voltage and wide range I/O voltage is designed using a 90nm CMOS process. Proposed level shifter uses analog circuit techniques and zero-Vt transistor with no extra process step, no static power and stable duty ratio make this level shifter suitable for ultra low core voltage and wide range I/O voltage applications. These techniques work even 0.6V core voltage, 1.65～3.6V I/O voltage within 45:55 duty ratio up to 200MHz.